- 您现在的位置：买卖IC网 > Sheet目录130 > DHG30I1200HA (IXYS)DIODE FRD SGL 1200V 30A TO-247AD
   DHG 30 I 1200 HA 300 400 500 600 700 800 900 1000 1100 1 2 3 4 5 6 7 0.0 0.5 1.0 1.5 2.0 2.5 3.0 0 10 20 30 40 50 60 Qrr [μC] IF [A] VF [V] diF/dt [A/μs] TVJ = 125°C TVJ =25°C TVJ= 125°C VR =600 V 15 A 30 A 60 A Fig. 1 Typ. Forward current versus VF Fig. 2 Typ. reverse recov.charge Qrr vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 10 20 30 40 50 60 70 IRR [A] diF/dt [A/μs] TVJ= 125°C VR =600V 15 A 30 A 60 A Fig. 3 Typ. peak reverse current IRM vs. di/dt 300 400 500 600 700 800 900 1000 1100 0 100 200 [ns] 300 400 500 600 700 trr diF/dt [A/μs] 15 A 30 A 60 A TVJ= 125°C VR = 600 V Fig. 4 Typ. recovery time trr versus di/dt Fig. 5 Typ. recovery energy Erec versus di/dt 300 400 500 600 700 800 900 1000 1100 0.0 0.4 [mJ] 0.8 1.2 1.6 2.0 Erec diF/dt [A/μs] TVJ=125°C VR = 600 V 15 A 30 A 60 A Fig. 6 Transient thermal impedance 0.001 0.01 0.1 1 10 0.1 1 ZthJC [K/W tP [s] Ri t i 0.158 0.0005 0.118 0.004 0.155 0.02 0.269 0.15 IXYS reserves the right to change limits, conditions and dimensions. ? 2011 IXYS all rights reserved 20110510a Data according to IEC 60747and per diode unless otherwise specified |